High-power UV InGaN/AlGaN double-heterostructure LEDs

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1996 · 1.2K citations

Engineering, Electrical Engineering, Materials Science +17

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Solid phase immiscibility in GaInN

I. H. Ho, G. B. Stringfellow · Applied Physics Letters · 1996 · 1K citations

Natural Sciences, Materials Science, Physics +17

Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Yukio Narukawa, Yoichi Kawakami, Mitsuru Funato et al. · Applied Physics Letters · 1997 · 925 citations

Engineering, Materials Engineering, Materials Science +17