Electron trapping and interface trap generation in drain extended pMOS transistors

Abstract

The hot carrier behavior of a p-type lateral drain extended MOS (DeMOS) is for the first time investigated using charge pumping (CP). In an early stage of hot carrier stress, electron injection and trapping occurs. With increasing stress time, the interface trap formation in the spacer oxide becomes the dominant mechanism. In this way, the abnormal degradation of the specific on-resistance Ron is explained.