F. Bauwens

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

M. Fernández, X. Perpiñà, Jaume Roig-Guitart et al. · IEEE Transactions on Industrial Electronics · 2017 · 88 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters

Ignacio Castro, J. Roig, Ratmir Gelagaev et al. · IEEE Transactions on Power Electronics · 2015 · 78 citations · Full text

A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

P. Moens, Johann Mertens, F. Bauwens et al. · 2007 · 67 citations

Device Modeling, Electrical Engineering, Engineering +9

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

M. Fernández, X. Perpiñà, J. Roig et al. · IEEE Electron Device Letters · 2017 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12