IEEE Transactions on Nuclear Science · 2008 · 83 citations · 14 references
EngineeringComputer EngineeringElectrical EngineeringFault ToleranceMicroelectronicsSemiconductor DevicesBuilt-in Self-testDevice ReliabilityEmbedded Memory BlocksSemiconductor ReliabilityCharge CollectionMemory Fault InjectionSingle Event EffectsSingle Event Upset ModelingStatic Random Access Memory ModelingStatic Random-access Memory Design
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
14
Impact of technology trends on SEU in CMOS SRAMs
P.E. Dodd, F.W. Sexton, G.L. Hash et al. · IEEE Transactions on Nuclear Science · 1996 · 126 citations
Engineering, Computer Engineering, Electrical Engineering +17
Single-event charge enhancement in SOI devices
L. W. Massengill, E.V. Kerns, S.E. Kerns et al. · IEEE Electron Device Letters · 1990 · 92 citations
Engineering, Computer Engineering, Electrical Engineering +13