Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003 · 34 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationSpectroscopyThin FilmsInfrared SpectroscopyInorganic SpectroscopyOptical SpectroscopyRaman SpectroscopySilicon MaterialsThin Film Optical PropertiesDoped SemiconductorsInfrared SpectraRaman ScatteringSiliconSilicon DioxideSilicon Thin FilmsThin Oxide FilmsThin-film Oxides
In this work, SiO<sub>2</sub> and fluorine and phosphorous doped SiO<sub>2</sub> thin films are investigated using FTIR and Raman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are therefore discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.
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G. Lucovsky, M. J. Mantini, J. K. Srivastava et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 395 citations