F.‐G. Kirscht

Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon

Yury Gogotsi, Chang‐Wook Baek, F.‐G. Kirscht · Semiconductor Science and Technology · 1999 · 235 citations

Materials Science, Engineering, Material Processing +11

Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations

P. Gawobzewski, Erzsébet Hild, F.‐G. Kirscht et al. · physica status solidi (a) · 1984 · 58 citations

Recent advanced applications of AAS and ICP-MS in the semiconductor industry

Mohammad Bagher Shabani, Yusuke Shiina, F.‐G. Kirscht et al. · Materials Science and Engineering B · 2003 · 35 citations

Semiconductors, Materials Science, Semiconductor Technology +6

DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C

K. Schmalz, F.‐G. Kirscht, H. Klose et al. · physica status solidi (a) · 1987 · 32 citations

Engineering, Chemistry, Defect Tolerance +16

A study of gettering efficiency and stability in Czochralski silicon

Scott A. McHugo, E. R. Weber, Masaya Mizuno et al. · Applied Physics Letters · 1995 · 28 citations

Materials Engineering, Materials Science, Sintering +9