F.‐G. Kirscht - Concepedia

Author

F.‐G. Kirscht

CiS Forschungsinstitut für Mikrosensorik GmbH

Also Known As

F Kirscht, F. -G. Kirscht, F. G. Kirscht, F. Kirscht, F.-G. Kirscht, F.G. Kirscht, F.‐G. Kirscht, Fritz G. Kirscht, Fritz Kirscht

Publications

657

Citations

H-Index

Concepts

All Affiliations

CiS Forschungsinstitut für Mikrosensorik GmbH Mitsubishi Corporation (United States)Technische Universität Ilmenau University of California, Berkeley

About

F.‐G. Kirscht is an author at CiS Forschungsinstitut für Mikrosensorik GmbH specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	467
2	Applied Physics	11	13	467
3	Electrical Engineering	6	6	126
4	Chemistry	2	2	43
5	Natural Sciences	1	1	10

F.‐G. Kirscht

Publications

546

Citations

H-Index

Page 1

	Year	Citations
Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon Yury Gogotsi, Chang‐Wook Baek, F.‐G. Kirscht Semiconductor Science and Technology Materials ScienceEngineeringMaterial ProcessingMicrofabricationOptical Properties	1999	235
Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations P. Gawobzewski, Erzsébet Hild, F.‐G. Kirscht, physica status solidi (a)	1984	58
Recent advanced applications of AAS and ICP-MS in the semiconductor industry Mohammad Bagher Shabani, Yusuke Shiina, F.‐G. Kirscht, Materials Science and Engineering B SemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringApplied Physics	2003	35
DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C K. Schmalz, F.‐G. Kirscht, H. Klose, physica status solidi (a) EngineeringChemistryDefect ToleranceDeep Level DefectsSemiconductor Device	1987	32
A study of gettering efficiency and stability in Czochralski silicon Scott A. McHugo, E. R. Weber, Masaya Mizuno, Applied Physics Letters Materials EngineeringMaterials ScienceSinteringEngineeringCrystalline Defects	1995	28
The use of heater-magnet module for Czochralski growth of PV silicon crystals with quadratic cross section P. Rudolph, M. Czupalla, B. Lux, Journal of Crystal Growth Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringPerovskite Solar Cell	2010	25
Silicon Epitaxial Layer Lifetime Characterization J. E. Park, D.K. Schroder, Suat-Eng Tan, Journal of The Electrochemical Society Electrical EngineeringSemiconductor DeviceEngineeringPhysicsDevice Reliability	2001	23
DLTS study of deep level defects in Cz n-Si due to heat treatment at 600 to 900 °C K. Schmalz, F.‐G. Kirscht, K. Tittelbach‐Helmrich physica status solidi (a) Materials ScienceHigh DensityElectrical EngineeringSemiconductor TechnologyEngineering	1988	19
Photoluminescence Intensity Analysis in Application to Contactless Characterization of Silicon Wafers A. Buczkowski, Benno Orschel, S. Kim, Journal of The Electrochemical Society Optical MaterialsEngineeringSilicon On InsulatorLuminescence PropertyIi-vi Semiconductor	2003	15
Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers F.‐G. Kirscht, Y. Furukawa, W. Seifert, Materials Science and Engineering B Materials ScienceElectrical CharacteristicsElectrical EngineeringEngineeringApplied Physics	1996	12

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