H. Klose

Hydrogen-related deep levels in proton-bombarded silicon

K. Irmscher, H. Klose, K. Maass · Journal of Physics C Solid State Physics · 1984 · 132 citations

Defect Tolerance, Hydrogen-related Deep Levels, Deep-level Transient Spectroscopy +14

DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C

K. Schmalz, F.‐G. Kirscht, H. Klose et al. · physica status solidi (a) · 1987 · 32 citations

Engineering, Chemistry, Defect Tolerance +16

Electric field enhanced electron emission from gold acceptor level and A-centre in silicon

K. Irmscher, H. Klose, K. Maass · physica status solidi (a) · 1983 · 27 citations

Semiconductor Technology, Electrical Engineering, Photoluminescence +9

On the Determination of Deep Level Concentration Profiles by DLTS Measurements

K. Maass, K. Irmscher, H. Klose · physica status solidi (a) · 1985 · 13 citations

Engineering, Accelerator Mass Spectrometry, Physics +13

Removal of Electrically Active Defects in Silicon by 340 MeV Xe ion Bombardment

I. V. Antonova, A. A. Karanovich, A. V. Rybin et al. · physica status solidi (a) · 1995 · 13 citations

Electrical Engineering, Ion Implantation, Engineering +7