Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Abstract

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.