G. J. Pietsch

Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM

Ulrich Köhler, Otto Jusko, G. J. Pietsch et al. · Surface Science · 1991 · 171 citations

Materials Science, Engineering, Applied Physics +4

Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111)

G. J. Pietsch, Ulrich Köhler, M. Henzler · Journal of Applied Physics · 1993 · 92 citations

Engineering, Atomic Steps, Chemistry +21

Chemomechanical polishing of silicon: Surface termination and mechanism of removal

G. J. Pietsch, G. S. Higashi, Yves J. Chabal · Applied Physics Letters · 1994 · 89 citations

Engineering, Surface Termination, Mechanical Engineering +19

The atomic-scale removal mechanism during chemo-mechanical polishing of Si(100) and Si(111)

G. J. Pietsch, Yves J. Chabal, G. S. Higashi · Surface Science · 1995 · 83 citations

Materials Science, Materials Engineering, Chemical Engineering +12

Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing

G. J. Pietsch · Applied Physics A · 1995 · 75 citations

Chemical Engineering, Engineering, Surface Chemistry +5