IEEE Electron Device Letters · 2002 · 80 citations · 9 references
Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsGood Mosfet CharacteristicsSemiconductor MaterialSemiconductor Device FabricationReactive SputteringThin FilmsSilicon On InsulatorMicroelectronicsElectrical PropertiesLow Resistivity RuElectrochemistrySemiconductor Device
In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p- and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as I/sub DS/-V/sub GS/ and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.
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