CDM and HBM analysis of ESD protected 60 GHz power amplifier in 45 nm low-power digital CMOS

Abstract

A 60 GHz Power Amplifier (PA) is designed in a 45 nm digital CMOS technology with inductive ESD protection at both RF input and output, and with standard foundry ESD protection for the power pads. Next to state-of-the-art RF performance, a record ESD performance of 5.3 kV HBM and >8.5 A VFTLP is measured, complying with CDM class C4.