Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack - Concepedia

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Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack

23

Citations

31

References

2009

Year

F. Rochette, M. Cassé, M. Mouis, Ariel Haziot, T. Pioger, G. Ghibaudo, F. Boulanger

Solid-State Electronics

Electrical EngineeringEngineeringHfo2/tin Gate StackNanoelectronicsApplied PhysicsSilicon On InsulatorMicroelectronicsPiezoresistance EffectSemiconductor Device

References

	Year	Citations

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