IEEE Electron Device Letters · 1988 · 26 citations · 13 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ScalingDevice SimulationElectron TransportElectronic Transport ModelingMonte Carlo Transport MethodsDrift-diffusion SimulationElectric Field DistributionElectron IonizationField-effect Transistor SimulationIonizationLocal-field EffectsMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet Modeling
A theory of the electron ionization coefficient as a function of the spatially varying electric field in n-MOSFETs at 300 K is presented. Assuming an exponentially increasing longitudinal electric field, the spatial variation of the ionization coefficient has been calculated using a Monte Carlo simulation. It is found that, over a wide range of the length parameter which describes the electric field profile, the ionization coefficient scales linearly. The expression given for the electron ionization coefficient depends only on the local field and the length parameter and therefore can be used to incorporate nonlocal hot-electron effects in conventional drift-diffusion device simulators.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Ionization Rates for Electrons and Holes in Silicon
A. G. Chynoweth · Physical Review · 1958 · 580 citations