Precise control of sheet resistance in boron doping of silicon by excimer laser irradiation

Abstract

To control the sheet resistance in boron doping of silicon by the excimer laser irradiation, two-step doping consisting of the deposition of boron films and the incorporation of dopant atoms is proposed. These processes are carried out in the same chamber successively. Precise control of the sheet resistance can be realized by this method and a very low sheet resistance can also be obtained by only one pulse irradiation for the melting of silicon.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>