Concepedia

SiGe HBTs featuring f<sub>T</sub> ≫400GHz at room temperature

B. Geynet, F. Danneville, D. Dutartre, A. Chantre, P. Chevalier, B. Vandelle, F. Brossard, N. Zerounian, M. Buczko, D. Gloria,

2008 · 24 citations · 11 references

Abstract

This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.

References

11

Half-terahertz operation of SiGe HBTs

R. Krithivasan, Yuan Lu, John D. Cressler et al. · IEEE Electron Device Letters · 2006 · 101 citations

Engineering, Electrical Engineering, Physics +16

Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating f<sub>T</sub> = 765 GHz at 25&amp;#x000B0;C Increasing to f<sub>T</sub> = 845 GHz at -55&amp;#x000B0;C

William Snodgrass, W. Hafez, N.E. Harff et al. · 2006 · 53 citations

Engineering, Electrical Engineering, Physics +13

A low-parasitic collector construction for high-speed SiGe:C HBTs

B. Heinemann, R. Barth, D. Bolze et al. · 2005 · 44 citations

Engineering, Electrical Engineering, Microelectronics +16

300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compabitility

P. Chevalier, B. Barbalat, Laurent Rubaldo et al. · 2005 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

P. Chevalier, B. Barbalat, M. Laurens et al. · 2007 · 35 citations

Engineering, Electrical Engineering, Microelectronics +13