N.E. Harff

Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

Xomalin G. Peralta, S. J. Allen, Michael C. Wanke et al. · Applied Physics Letters · 2002 · 316 citations

Engineering, Electrical Engineering, Physics +17

Conductance Modulation in Double Quantum Wells Due to Magnetic Field-Induced Anticrossing

J. A. Simmons, S. K. Lyo, N.E. Harff et al. · Physical Review Letters · 1994 · 87 citations

Natural Sciences, Physics, Condensed Matter Physics +13

Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures

M.V. Weckwerth, J. A. Simmons, N.E. Harff et al. · Superlattices and Microstructures · 1996 · 64 citations

Engineering, Materials Engineering, Materials Science +16

Self-Aligned InP DHBT with<tex>$f_tau$</tex>and<tex>$f_max$</tex>Over 300 GHz in a New Manufacturable Technology

Gang He, J. K. Howard, P. Partyka et al. · IEEE Electron Device Letters · 2004 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating f<sub>T</sub> = 765 GHz at 25°C Increasing to f<sub>T</sub> = 845 GHz at -55°C

William Snodgrass, W. Hafez, N.E. Harff et al. · 2006 · 53 citations

Engineering, Electrical Engineering, Physics +13