William Snodgrass

Statistics

Publications

Citations

180

H-Index

Active since

2005

Affiliations

University of Illinois Urbana-Champaign(Current)

Agilent Technologies (United States)

William Snodgrass is an author at University of Illinois Urbana-Champaign specializing in microelectronics, electrical engineering, and semiconductor devices.

Publications per year

2005–2007

Publications

12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

W. Hafez, William Snodgrass, M. Feng · Applied Physics Letters · 2005 · 66 citations

Engineering, Electrical Engineering, Microelectronics +15

Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating f<sub>T</sub> = 765 GHz at 25&amp;#x000B0;C Increasing to f<sub>T</sub> = 845 GHz at -55&amp;#x000B0;C

William Snodgrass, W. Hafez, N.E. Harff et al. · 2006 · 53 citations

Engineering, Electrical Engineering, Physics +13

Type-II GaAsSb/InP DHBTs with Record f<inf>T</inf> = 670 GHz and Simultaneous f<inf>T</inf>, f<inf>MAX</inf> &#x226B; 400 GHz

William Snodgrass, Bing-Ruey Wu, K. Y. Cheng et al. · 2007 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT&gt;500GHz

William Snodgrass, Bing-Ruey Wu, W. Hafez et al. · Applied Physics Letters · 2006 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

Bing-Ruey Wu, William Snodgrass, M. Feng et al. · Journal of Crystal Growth · 2007 · 14 citations

Engineering, Electrical Engineering, Materials Science +12

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