Bing-Ruey Wu

External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication

Ching‐Fuh Lin, Yi-Shin Su, Bing-Ruey Wu · IEEE Photonics Technology Letters · 2002 · 51 citations

Optical Materials, Engineering, Laser Science +23

Extremely broadband InGaAsP/InP superluminescentdiodes

Bing-Ruey Wu, Ching‐Fuh Lin, Lih-Wen Laih et al. · Electronics Letters · 2000 · 38 citations

Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz

W. Snodgrass, Bing-Ruey Wu, W. Hafez et al. · IEEE Electron Device Letters · 2006 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gaassb Base Layer +12

Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers–superluminescent diodes

Ching‐Fuh Lin, Bing-Ruey Wu, Lih-Wen Laih et al. · Optics Letters · 2001 · 34 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Type-II GaAsSb/InP DHBTs with Record f<inf>T</inf> = 670 GHz and Simultaneous f<inf>T</inf>, f<inf>MAX</inf> ≫ 400 GHz

William Snodgrass, Bing-Ruey Wu, K. Y. Cheng et al. · 2007 · 25 citations

Electrical Engineering, Engineering, Rf Semiconductor +10