Extremely broadband InGaAsP/InP superluminescentdiodes

Bing-Ruey Wu, Ching‐Fuh Lin, Lih-Wen Laih, Tien‐Tsorng Shih

Electronics Letters · 2000 · 38 citations · 6 references

Abstract

Record broadband characteristics of superluminescent diodes (SLD) are reported. Using two 87 Å In0.53Ga0.47As quantum wells and three 60 Å In0.67Ga0.33As0.72P0.28 quantum wells, the fabricated SLDs exhibit a very broad emission spectrum. The spectral width is nearly 300 nm, covering the range from 1300 to 1585.5 nm.

References

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