P. Partyka

Self-Aligned InP DHBT with<tex>$f_tau$</tex>and<tex>$f_max$</tex>Over 300 GHz in a New Manufacturable Technology

Gang He, J. K. Howard, P. Partyka et al. · IEEE Electron Device Letters · 2004 · 57 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon

P. Partyka, Yishan Zhong, K. Nordlund et al. · Physical review. B, Condensed matter · 2001 · 52 citations

Engineering, Irradiation-induced Point Defects, Defect Tolerance +18

Atomistic simulation of diffuse x-ray scattering from defects in solids

K. Nordlund, P. Partyka, R. S. Averback et al. · Journal of Applied Physics · 2000 · 26 citations

X-ray Spectroscopy, Point Defects, Engineering +18

Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs

A. Gaber, H. Zillgen, P. Ehrhart et al. · Journal of Applied Physics · 1997 · 21 citations · Full text

Aluminium Nitride, Irradiation-induced Increase, Engineering +19

X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1−xAs

P. Partyka, R. S. Averback, David V. Forbes et al. · Journal of Applied Physics · 1998 · 20 citations

Materials Science, Ion Implantation, Material Analysis +13