IEEE Electron Device Letters · 1991 · 20 citations · 4 references
EngineeringThickness IncreaseCorrosionDirect EvidenceMaterials EngineeringMaterials ScienceCrystalline DefectsOxide ElectronicsW-polycide ProcessesOxide SemiconductorsAnnealed W PolycideHigh-frequency Cv MeasurementsMicroelectronicsMaterial AnalysisSurface ScienceApplied PhysicsTungsten Polycide ProcessesThin FilmsChemical Vapor Deposition
The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide were analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and approximately 285 AA for as-deposited and 1000 degrees C annealed samples, respectively. The TEM results agree with those from CV measurements. The TEM analyses provide direct physical evidence of an additional oxide thickness ( approximately 41 AA) during the W-polycide annealing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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0.5 micron CMOS for high performance at 3.3 V
R. A. Chapman, C.C. Wei, David A. Bell et al. · 2003 · 47 citations