Concepedia

Oxide Thickness Control

Oxide Thickness Control is a process-level methodology in surface oxidation engineering that regulates the growth kinetics and final thickness of oxide layers on materials through precise manipulation of environmental parameters, material properties, or external stimuli.

231

Publications

9.9K

Citations

1.2K

Authors

302

Institutions

Publications per year

2017–2026

53

Parents

Publications

231

High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities

Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch et al. · IEEE Transactions on Nanotechnology · 2005 · 497 citations · Full text

, , +17

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Mikko Ritala, Kaupo Kukli, Antti Rahtu et al. · Science · 2000 · 483 citations

, , +17

Role of Interfacial Oxide in High-Efficiency Graphene–Silicon Schottky Barrier Solar Cells

Yi Song, Xinming Li, Charles Mackin et al. · Nano Letters · 2015 · 448 citations

, , +17

Drain voltage scaling in carbon nanotube transistors

M. Radosavljević, Stefan Heinze, J. Tersoff et al. · Applied Physics Letters · 2003 · 204 citations · Full text

, , +17

High-voltage accumulation-layer UMOSFET's in 4H-SiC

Jianjun Tan, James A. Cooper, M. R. Melloch · IEEE Electron Device Letters · 1998 · 192 citations

, , +16

1–5 of 231

Authors

1.2K

  1. JC
    Jack C. Lee

    The University of Texas at Austin, United States

    4 publications · 84 citations

    4

    h-index

  2. PA
    Phaedon Avouris

    IBM Research - Thomas J. Watson Research Center, United States

    4 publications · 869 citations

    4

    h-index

  3. KS
    K. Sawada

    Toshiba (Japan), Japan

    3 publications · 75 citations

    3

    h-index

  4. YL
    Yu-Ming Lin

    IBM Research - Thomas J. Watson Research Center, United States

    3 publications · 665 citations

    3

    h-index

  5. HY
    Hee Yeoul Yoo

    Toshiba (Japan), Japan

    3 publications · 75 citations

    3

    h-index

1–5 of 1.2K

Institutions

302

  1. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    7 h-index

    38 publications

    4.8K citations

  2. IMEC

    Leuven, Belgium

    7 h-index

    48 publications

    1.3K citations

  3. The University of Texas at Austin

    Austin, United States

    6 h-index

    26 publications

    552 citations

  4. Toshiba (Japan)

    Tokyo, Japan

    6 h-index

    28 publications

    1.2K citations

  5. Seoul National University

    Seoul, South Korea

    5 h-index

    25 publications

    763 citations

  6. KU Leuven

    Leuven, Belgium

    5 h-index

    28 publications

    690 citations

  7. Purdue University West Lafayette

    West Lafayette, United States

    5 h-index

    15 publications

    1.1K citations

  8. Samsung (South Korea)

    Seoul, South Korea

    4 h-index

    18 publications

    705 citations

1–8 of 302

Venues

  1. Applied Physics Letters

    18 publications · 1.1K citations

    14

    h-index

  2. IEEE Transactions on Electron Devices

    16 publications · 716 citations

    14

    h-index

  3. IEEE Electron Device Letters

    16 publications · 793 citations

    14

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 7 publications · 106 citations

    7

    h-index

  5. Thin Solid Films

    7 publications · 280 citations

    7

    h-index

1–5