Concepedia

Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors

M. Ravi, Amitava DasGupta, Nandita DasGupta

IEEE Transactions on Electron Devices · 2003 · 30 citations · 13 references

DOI

Concepts

Abstract

It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after sulfur passivation showed no degradation in characteristics with time.

References

13

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

, , +17

Universal Passivation Effect of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment on the Surface of III-V Compound Semiconductors

Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi et al. · Japanese Journal of Applied Physics · 1991 · 247 citations

, , +17

Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs <i>p</i> <i>n</i> diodes

M. S. Carpenter, M. R. Melloch, Mark Lundstrom et al. · Applied Physics Letters · 1988 · 192 citations · Full text

, , +17

A Model to Explain the Effective Passivation of the GaAs Surface by (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub> Treatment

Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa et al. · Japanese Journal of Applied Physics · 1988 · 186 citations

, , +17

Sulfur as a surface passivation for InP

R. Iyer, R. Chang, D. L. Lile · Applied Physics Letters · 1988 · 145 citations

, , +17