IEEE Electron Device Letters · 1985 · 23 citations · 1 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsCapacitanceField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMos Capacitance SimulationMosfet ModelingSaturationSaturation EffectsVelocity Saturation
To analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree quite well. Several causes of short-channel effects are explained by the simulations. Velocity saturation effects are found to play a key role in the gradual increase in C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</inf> . Also holes in the accumulation region and the two-dimensional effect or the influence of the back-gate field from the drain are important in explaining the short-channel effect of MOS transistor capacitance.
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