Concepedia

Mos Capacitance Simulation

MOS Capacitance Simulation is a computational modeling methodology that distinguishes itself by enabling the prediction and analysis of charge accumulation, depletion, and inversion behaviors in MOS capacitor structures through numerical solutions of semiconductor physics equations under varying bias conditions.

76

Publications

2.8K

Citations

248

Authors

104

Institutions

Publications per year

2017–2026

6

Parents

Publications

76

A charge-oriented model for MOS transistor capacitances

D.E. Ward, R.W. Dutton · IEEE Journal of Solid-State Circuits · 1978 · 402 citations

, , +17

A simple model for the overlap capacitance of a VLSI MOS device

R. Shrivastava, K. Fitzpatrick · IEEE Transactions on Electron Devices · 1982 · 155 citations

, , +16

Electrical modeling of Through Silicon and Package Vias

Tapobrata Bandyopadhyay, Ritwik Chatterjee, Daehyun Chung et al. · 2009 · 123 citations

, , +16

A model for capacitance reconstruction from measured lossy MOS capacitance voltage characteristics

K.S.K. Kwa, Sanatan Chattopadhyay, Nebojša Janković et al. · Semiconductor Science and Technology · 2002 · 105 citations

, , +17

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods

A. Tataroğlu, Ş. Altındal · Microelectronic Engineering · 2008 · 91 citations

, , +16

1–5 of 76

Authors

248

  1. RD
    R.W. Dutton

    Stanford University, United States

    6 publications · 585 citations

    6

    h-index

  2. CC
    Changhoon Choi

    Korea University, South Korea

    3 publications · 138 citations

    3

    h-index

  3. JP
    J.C.J. Paasschens

    Philips (Netherlands), Netherlands

    2 publications · 57 citations

    2

    h-index

  4. MG
    Michael Gaitan

    National Institute of Standards and Technology, United States

    2 publications · 26 citations

    2

    h-index

  5. AA
    A.C.T. Aarts

    Eindhoven University of Technology, Netherlands

    2 publications · 57 citations

    2

    h-index

1–5 of 248

Institutions

104

  1. Stanford University

    Stanford, United States

    6 h-index

    20 publications

    1.5K citations

  2. IBM (United States)

    Armonk, United States

    4 h-index

    5 publications

    153 citations

  3. Texas Instruments (United States)

    Dallas, United States

    3 h-index

    8 publications

    262 citations

  4. Stanford SystemX Alliance

    Stanford, United States

    3 h-index

    11 publications

    554 citations

  5. IMEC

    Leuven, Belgium

    3 h-index

    13 publications

    436 citations

  6. Hokkaido University

    Sapporo, Japan

    3 h-index

    9 publications

    430 citations

  7. Toshiba (Japan)

    Tokyo, Japan

    3 h-index

    3 publications

    69 citations

  8. National Institute of Standards and Technology

    Gaithersburg, United States

    2 h-index

    6 publications

    82 citations

1–8 of 104

Venues

  1. IEEE Transactions on Electron Devices

    16 publications · 570 citations

    14

    h-index

  2. IEEE Electron Device Letters

    7 publications · 339 citations

    7

    h-index

  3. Solid-State Electronics

    6 publications · 115 citations

    7

    h-index

  4. 5

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 3 publications · 82 citations

    3

    h-index

1–5