K.S.K. Kwa

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

Daniel J. R. Appleby, Nikhil Ponon, K.S.K. Kwa et al. · Nano Letters · 2014 · 245 citations · Full text

Dielectrics, Engineering, Semiconductor Device +16

Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films

Nikhil Ponon, Daniel J. R. Appleby, Erhan Arac et al. · Thin Solid Films · 2015 · 194 citations · Full text

Materials Science, Materials Engineering, Chemical Engineering +14

A model for capacitance reconstruction from measured lossy MOS capacitance voltage characteristics

K.S.K. Kwa, Sanatan Chattopadhyay, Nebojša Janković et al. · Semiconductor Science and Technology · 2002 · 104 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

Sarah H. Olsen, A.G. O’Neill, L.S. Driscoll et al. · IEEE Transactions on Electron Devices · 2003 · 86 citations

Electrical Engineering, Semiconductor Device, Engineering +10

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Goutam Kumar Dalapati, Sanatan Chattopadhyay, K.S.K. Kwa et al. · IEEE Transactions on Electron Devices · 2006 · 78 citations

Electrical Engineering, Engineering, Channel Thickness +13