Device parameter extraction in the linear region of MOSFET's

Abstract

A self-consistent technique is proposed to extract device parameters from the I-V characteristics of MOSFET's in the linear region. The three parameters V/sub T/, B/sub m/(=/spl beta//sub 0/) and R/sub m/ are extracted from the implicitly weighed least square curve fitting of r/sub D/ against 1/(V/sub G/-V/sub T/-/spl alpha/V/sub D/). The series resistance R, the factor /spl theta/ of the V/sub G/ dependent /spl beta/, and L/sub eff/ are then obtained by comparing the long and short channel devices, Reasonable values are obtained for five technologies, and general agreement with Taur's method is confirmed. Based on the finding, a quick parameter extraction method using only three {r/sub D/, V/sub G/} data sets is proposed.