IEEE Electron Device Letters · 1985 · 43 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignTiming AnalysisCmos Logic CircuitsCompact Device ModelingCompact ModelingComplementary Metal-oxide-semiconductor SimulationDynamic TriggeringLatch DesignLumped-element ApproximationMetal-oxide-semiconductor Field-effect Transistor Modeling
Two-dimensional device simulation is used to accurately predict both static and dynamic triggering conditions for CMOS latchup. Excellent agreement is obtained with experimental results for static trigger currents that cannot be modeled using lumped element approaches. For the first time, full transient two-dimensional simulation is performed to obtain a dynamic triggering threshold.
2
Surface induced latchup in VLSI CMOS circuits
D. Takacs, C. Werner, J. Harter et al. · IEEE Transactions on Electron Devices · 1984 · 31 citations
Engineering, Computer Engineering, Electrical Engineering +17