Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO₂ Deposited at 300°C by Remote Plasma Technique

Abstract

High-quality gate SiO 2 for metal/oxide/semiconductor field-effect transistors (MOSFETs) could be deposited at as low as 300° C in remote plasma chemical vapor deposition (CVD) utilizing activated neutral oxygen species and SiH 4 . The interface between deposited SiO 2 and Si was improved with the formation of thin SiO 2 by low-temperature oxidation using activated neutral oxygen species just before film deposition. The resistivity and breakdown field were as high as 10 16 Ω ·cm and 10 MV/cm, respectively, equivalent to those of thermal SiO 2 grown at high temperatures. The achieved minimum interface state density was as low as 4×10 10 cm -2 eV -1 . Fabricated MOSFETs using single crystalline Si showed excellent performance, and an effective channel mobility of 135 cm 2 V -1 s -1 for holes was obtained.