J. T. Fitch

Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

J. T. Fitch, C. H. Björkman, G. Lucovsky et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 168 citations

Optical Materials, Engineering, Stress Gradients +20

Effects of thermal history on stress-related properties of very thin films of thermally grown silicon dioxide

J. T. Fitch, G. Lucovsky, E. Kobeda et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 127 citations

Materials Science, Semiconductors, Optical Materials +15

Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si

C. H. Björkman, J. T. Fitch, G. Lucovsky · Applied Physics Letters · 1990 · 87 citations

Engineering, Thermal Oxidation, Thickness-averaged Oxide Stress +17

Atomic structure in SiO2 thin films deposited by remote plasma-enhanced chemical vapor deposition

G. Lucovsky, J. T. Fitch, D. V. Tsu et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 58 citations

Optical Materials, Engineering, Thin Film Process Technology +18

Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth

J. T. Fitch · Journal of The Electrochemical Society · 1994 · 48 citations

Chemical Engineering, Engineering, Crystalline Defects +13