C. H. Björkman

Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

J. T. Fitch, C. H. Björkman, G. Lucovsky et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 168 citations

Optical Materials, Engineering, Stress Gradients +20

Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si

C. H. Björkman, J. T. Fitch, G. Lucovsky · Applied Physics Letters · 1990 · 87 citations

Engineering, Thermal Oxidation, Thickness-averaged Oxide Stress +17

Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H-terminated Si surfaces

Tetsuji Yasuda, D. E. Aspnes, D. R. Lee et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1994 · 79 citations

Materials Science, Surface Characterization, Optical Materials +15

Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second-harmonic generation at these interfaces

C. H. Björkman, Tetsuji Yasuda, C. E. Shearon et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 57 citations

Si–sio2 Interfaces, Engineering, Integrated Circuits +16

Second-harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma-assisted oxidation and deposition processes

C. H. Björkman, C. E. Shearon, Yuncan Ma et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 38 citations

Surface Characterization, Optical Materials, Engineering +14