Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Abstract

Internal photoemission, photoconductivity, and spectroscopic ellipsometry experiments were carried out to characterize the electronic structure of interfaces of (001) and (111)-oriented Si with crystalline (epitaxially grown) and amorphous Gd2O3 insulators. The energy barriers for electrons and holes (3.2 and 3.9eV, respectively) appear to be sensitive neither to the orientation of the Si crystal surface nor to the oxide phase (crystalline or amorphous). This result indicates that despite the difference in Si–O bond density in going from (001) to (111)Si, the interface dipoles do not ensue any measurable effect on the electronic structure of the interface and the associated band offsets.