M. Badylevich

Room-temperature silicon light-emitting diodes based on dislocation luminescence

V. V. Kveder, M. Badylevich, É. A. Steinman et al. · Applied Physics Letters · 2004 · 171 citations

Engineering, Materials Engineering, Materials Science +17

Silicon light‐emitting diodes based on dislocation‐related luminescence

V. V. Kveder, M. Badylevich, W. Schröter et al. · physica status solidi (a) · 2005 · 69 citations

Engineering, Materials Engineering, Materials Science +17

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N. Menou, M. Popovici, Sergiu Clima et al. · Journal of Applied Physics · 2009 · 61 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

M. Badylevich, S. Shamuilia, V. V. Afanas’ev et al. · Applied Physics Letters · 2007 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Band alignment and electron traps in Y2O3 layers on (100)Si

W. C. Wang, M. Badylevich, V. V. Afanas’ev et al. · Applied Physics Letters · 2009 · 49 citations

Natural Sciences, Materials Science, Physics +17