Room-temperature silicon light-emitting diodes based on dislocation luminescence

V. V. Kveder, M. Badylevich, É. A. Steinman, +3

Applied Physics Letters

EngineeringOptoelectronic DevicesSilicon On InsulatorDislocation LuminescenceSemiconductor Nanostructures +16

Silicon light‐emitting diodes based on dislocation‐related luminescence

V. V. Kveder, M. Badylevich, W. Schröter, +3

physica status solidi (a)

EngineeringOptoelectronic DevicesLuminescence PropertyDeep Level DefectsSemiconductors +15

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, +4

Applied Physics Letters

EngineeringSi–o Bond DensitySilicon SubstratesOptoelectronic DevicesSilicon On Insulator +16

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N. Menou, M. Popovici, Sergiu Clima, +23

Journal of Applied Physics

Materials ScienceOxide HeterostructuresElectrical EngineeringMaterial AnalysisEngineering +12

Band alignment and electron traps in Y2O3 layers on (100)Si

W. C. Wang, M. Badylevich, V. V. Afanas’ev, +7

Applied Physics Letters

Blocking InsulatorOptical MaterialsEngineeringY2o3 LayersOptoelectronic Devices +14

Spin‐resonant change of unlocking stress for dislocations in silicon

M. Badylevich, V. V. Kveder, Yu. A. Ossipyan

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

EngineeringMagnetic ResonanceUnlocking StressSpintronic MaterialSilicon On Insulator +15

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

V. V. Afanas’ev, S. Shamuilia, M. Badylevich, +7

Microelectronic Engineering

Materials ScienceEngineeringSilicon InterfacesOxide ElectronicsApplied Physics +5

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

V. V. Afanas’ev, M. Badylevich, A. Stesmans, +9

Applied Physics Letters

Electrical EngineeringEngineeringPhysicsCompound SemiconductorValence Band Offsets +9

Impact of magnetite nanoparticle incorporation on optical and electrical properties of nanocomposite LbL assemblies

Alexey M. Yashchenok, Dmitry A. Gorin, M. Badylevich, +6

Physical Chemistry Chemical Physics

EngineeringMetal NanoparticlesMetallic NanomaterialsPlasmon-enhanced PhotovoltaicsElectrical Properties +16

Electronic structure of the interface of aluminum nitride with Si(100)

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, +3

Journal of Applied Physics

Materials ScienceSemiconductorsAluminium NitrideAluminum NitrideEngineering +12