V. V. Kveder

Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

V. V. Kveder, M. Kittler, W. Schröter · Physical review. B, Condensed matter · 2001 · 243 citations

Electrical Engineering, Engineering, Dislocation Interaction +15

Room-temperature silicon light-emitting diodes based on dislocation luminescence

V. V. Kveder, M. Badylevich, É. A. Steinman et al. · Applied Physics Letters · 2004 · 171 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +18

On the Energy Spectrum of Dislocations in Silicon

V. V. Kveder, Yu. A. Osip’yan, W. Schröter et al. · physica status solidi (a) · 1982 · 158 citations

Materials Engineering, Materials Science, Point Defects +15

Dislocation-related electroluminescence at room temperature in plastically deformed silicon

V. V. Kveder, É. A. Steinman, H. G. Grimmeiss · Physical review. B, Condensed matter · 1995 · 121 citations

Ii-vi Semiconductor, Photoluminescence, Engineering +12

Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials

M. Seibt, Reda Khalil, V. V. Kveder et al. · Applied Physics A · 2008 · 96 citations · Full text