On the Energy Spectrum of Dislocations in Silicon

Abstract

Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized states strongly change with deformation temperature and during anneal around 0.6 Tm (Tm melting temperature). While part of this effect can be certainly explained by anneal out of point defects, there must be a structural change in the core region of the dislocation, since the dislocation density remains unchanged during anneal.