É. A. Steinman - Concepedia

Author

É. A. Steinman

Osipyan Institute of Solid State Physics RAS

Also Known As

E A Steinman, E. A. Steinman, E. STEINMAN, E. Steinman, E.-A. Steinman, E.A Steinman, E.A. STEINMAN, E.A. Steinman, Edward A. Steinman, Edward Steinman

Publications

755

Citations

H-Index

Concepts

All Affiliations

Osipyan Institute of Solid State Physics RAS Russian Academy of Sciences Lund University University of Göttingen Institute for Design Problems in Microelectronics

ÉA

About

É. A. Steinman is an author at Osipyan Institute of Solid State Physics RAS specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	548
2	Applied Physics	11	12	534
3	Chemistry	2	2	29
4	Electrical Engineering	2	2	240
5	Materials Engineering	1	1	10

É. A. Steinman

Publications

570

Citations

H-Index

Page 1

	Year	Citations
Room-temperature silicon light-emitting diodes based on dislocation luminescence V. V. Kveder, M. Badylevich, É. A. Steinman, Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorDislocation LuminescenceSemiconductor Nanostructures	2004	171
Dislocation-related electroluminescence at room temperature in plastically deformed silicon V. V. Kveder, É. A. Steinman, H. G. Grimmeiss Physical review. B, Condensed matter Ii-vi SemiconductorPhotoluminescenceEngineeringDislocation InteractionPhysics	1995	121
Silicon light‐emitting diodes based on dislocation‐related luminescence V. V. Kveder, M. Badylevich, W. Schröter, physica status solidi (a) EngineeringOptoelectronic DevicesLuminescence PropertyDeep Level DefectsSemiconductors	2005	69
Dislocation-related luminescence properties of silicon É. A. Steinman, H. G. Grimmeiss Semiconductor Science and Technology Materials ScienceHeat TreatmentD1 Dislocation AcceptorIi-vi SemiconductorEngineering	1998	31
Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates É. A. Steinman, V. I. Vdovin, T. G. Yugova, Semiconductor Science and Technology Materials ScienceSige LayersEngineeringDislocation InteractionPhysics	1999	29
Photoluminescence and splitting of dislocations in germanium A. N. Izotov, A. I. Kolyubakin, É. A. Steinman physica status solidi (a) Narrow LinesPhotoluminescenceEngineeringDislocation InteractionCrystalline Defects	1992	26
The origin of the 0.78 eV luminescence band in dislocated silicon Anthony J. Kenyon, É. A. Steinman, C.W. Pitt, Journal of Physics Condensed Matter Materials SciencePhotoluminescence BandLuminescence BandsIi-vi SemiconductorEngineering	2003	21
Influence of oxygen on the dislocation related luminescence centers in silicon É. A. Steinman Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceIi-vi SemiconductorDislocation Related DefectPhotoluminescenceLuminescence Centers	2005	17
Crystal structure and photoluminescence of single crystals of fullerene-9,9′-trans-bis(telluraxanthenyl) molecular complex: C26H18Te2 · C60 · CS2 V. V. Kveder, É. A. Steinman, B.Zh. Narymbetov, Chemical Physics Crystal StructureSingle CrystalsEngineeringApplied PhysicsFullerene	1997	15
Photoluminescence of solid C60 polymerized under high pressure I. O. Bashkin, A. N. Izotov, A. P. Moravsky, Chemical Physics Letters Materials ScienceEngineeringSemiconducting PolymerPolymer ScienceConjugated Polymer	1997	14

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