T. G. Yugova

Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

O. B. Gusev, E. I. Shek, V. I. Vdovin et al. · Applied Physics Letters · 1998 · 35 citations

Optical Materials, Engineering, Erbium-implanted Silicon +18

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 2008 · 34 citations

Materials Science, Electron Density, Electrical Engineering +13

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

É. A. Steinman, V. I. Vdovin, T. G. Yugova et al. · Semiconductor Science and Technology · 1999 · 29 citations

Materials Science, Sige Layers, Engineering +13

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Applied Physics Letters · 2008 · 21 citations

Semiconductors, Thinner Buffers, Electrical Engineering +10

Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of The Electrochemical Society · 2007 · 19 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +12