Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric

J. M. J. Lopes, M. Roeckerath, T. Heeg, +8

Applied Physics Letters

Materials ScienceMaterials EngineeringEngineeringLanthanum LutetiumOxide Electronics +11

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, +4

Applied Physics Letters

EngineeringSi–o Bond DensitySilicon SubstratesOptoelectronic DevicesSilicon On Insulator +16

Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

V. V. Afanas’ev, S. Shamuilia, A. Stesmans, +5

Applied Physics Letters

Materials ScienceOxide HeterostructuresEngineeringPhysicsRare-earth Oxide Insulators +11

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

L. Pantisano, T. Schram, Z. Li, +8

Applied Physics Letters

Materials ScienceOxide HeterostructuresEngineeringRuox FormationSurface Electrochemistry +11

Internal photoemission of electrons at interfaces of metals with low-κ insulators

S. Shamuilia, V. V. Afanas’ev, P. Somers, +5

Applied Physics Letters

EngineeringCharge TransportSemiconductorsElectronic DevicesElectron Spectroscopy +18

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

V. V. Afanas’ev, S. Shamuilia, M. Badylevich, +7

Microelectronic Engineering

Materials ScienceEngineeringSilicon InterfacesOxide ElectronicsApplied Physics +5

Electronic structure of the interface of aluminum nitride with Si(100)

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, +3

Journal of Applied Physics

Materials ScienceSemiconductorsAluminium NitrideAluminum NitrideEngineering +12

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO<sub>2</sub>-Interfaces

Florin Ciobanu, Thomas Frank, Gerhard Pensl, +4

Materials science forum

Materials EngineeringMaterials ScienceElectrical EngineeringInterface Traps DitEngineering +12

Strontium hafnate films deposited by physical vapor deposition

Ivana McCarthy, Melody P. Agustin, S. Shamuilia, +3

Thin Solid Films

Materials ScienceEngineeringSurface ScienceApplied PhysicsStrontium Hafnate Films +4

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Z. Li, T. Schram, L. Pantisano, +12

Journal of Applied Physics

EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsMolecular Beam Epitaxy +16