Z. Li

Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization

Lars‐Åke Ragnarsson, Z. Li, Joshua Tseng et al. · 2009 · 58 citations

Engineering, Electrical Engineering, Microelectronics +11

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

L. Pantisano, T. Schram, Z. Li et al. · Applied Physics Letters · 2006 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Z. Li, T. Schram, L. Pantisano et al. · Journal of Applied Physics · 2007 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17

10 Gbit/s bit interleaving CDR for low-power PON

Christophe Van Praet, Guy Torfs, Z. Li et al. · Electronics Letters · 2012 · 11 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16