H. J. Osten

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

A. Fissel, Zahad Elassar, O. Kirfel et al. · Journal of Applied Physics · 2006 · 100 citations

Materials Science, Engineering, Surface Science +9

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

M. Czernohorsky, E. Bugiel, H. J. Osten et al. · Applied Physics Letters · 2006 · 98 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +15

Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

J. P. Liu, P. Zaumseil, E. Bugiel et al. · Applied Physics Letters · 2001 · 89 citations

Materials Engineering, Materials Science, Oxide Heterostructures +11

Introducing crystalline rare‐earth oxides into Si technologies

H. J. Osten, Apurba Laha, M. Czernohorsky et al. · physica status solidi (a) · 2008 · 88 citations

Materials Engineering, Semiconductors, Materials Science +15

Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells

Jan Krügener, Felix Haase, Michael Rienäcker et al. · Solar Energy Materials and Solar Cells · 2017 · 79 citations

Materials Science, Srh Bulk Lifetime, Electrical Engineering +8