H. J. Osten

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

A. Fissel, Zahad Elassar, O. Kirfel et al. · Journal of Applied Physics · 2006 · 101 citations

Engineering, Materials Engineering, Materials Science +17

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

M. Czernohorsky, E. Bugiel, H. J. Osten et al. · Applied Physics Letters · 2006 · 98 citations

Natural Sciences, Materials Engineering, Materials Science +17

Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

J. P. Liu, P. Zaumseil, E. Bugiel et al. · Applied Physics Letters · 2001 · 89 citations

Natural Sciences, Materials Science, Physics +17

Introducing crystalline rare‐earth oxides into Si technologies

H. J. Osten, Apurba Laha, M. Czernohorsky et al. · physica status solidi (a) · 2008 · 88 citations

Engineering, Materials Engineering, Materials Science +17

Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells

Jan Krügener, Felix Haase, Michael Rienäcker et al. · Solar Energy Materials and Solar Cells · 2017 · 82 citations

Engineering, Electrical Engineering, Materials Science +14