Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis

A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

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Engineering, Electrical Engineering, Microelectronics +16

Ion implantation into GaN

S. O. Kucheyev, J. S. Williams, S. J. Pearton · Materials Science and Engineering R Reports · 2001 · 413 citations

Engineering, Materials Engineering, Physics +6

H, He, and N implant isolation of n-type GaN

S.C. Binari, H.B. Dietrich, G. Kelner et al. · Journal of Applied Physics · 1995 · 139 citations

Engineering, Materials Engineering, Materials Science +16

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

Paolo Magnone, Felice Crupi, Gino Giusi et al. · IEEE Transactions on Device and Materials Reliability · 2009 · 124 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

W. S. Tan, P. A. Houston, P. J. Parbrook et al. · Applied Physics Letters · 2002 · 117 citations

Engineering, Electrical Engineering, Materials Science +17