Concepedia

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

T. Paskova, Vanya Darakchieva, Jens Birch, E. Valcheva, Per O. Å. Persson, B. Arnaudov, S. Tungasmitta, B. Monemar

Journal of Crystal Growth · 2005 · 67 citations · 15 references

DOI

Concepts

References

15

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 553 citations

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Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire

Michael D. Craven, Sung‐Hwan Lim, Feng Wu et al. · Applied Physics Letters · 2002 · 487 citations

, , +17

Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

B. A. Haskell, Troy J. Baker, Melvin McLaurin et al. · Applied Physics Letters · 2005 · 196 citations

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Defect reduction in (1120) <i>a</i>-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell, Feng Wu, Michael D. Craven et al. · Applied Physics Letters · 2003 · 175 citations

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Anisotropic structural characteristics of (1120) GaN templates and coalesced epitaxial lateral overgrown films deposited on (1012) sapphire

Hongmei Wang, Changqing Chen, Zheng Gong et al. · Applied Physics Letters · 2004 · 167 citations

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