E. Valcheva - Concepedia

Author

E. Valcheva

Sofia University "St. Kliment Ohridski"ORCID

Also Known As

E P Valcheva, E Valcheva, E. P. VALCHEVA, E. P. Valcheva, E. Valcheva, E.P. VALCHEVA, E.P. Valcheva, Evgenia P. Valcheva, Evgenia Valcheva, F Calle

137

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Sofia University "St. Kliment Ohridski"Linköping University Bulgarian Academy of Sciences Institute of General and Inorganic Chemistry Institute of Electronics

About

E. Valcheva is an author at Sofia University "St. Kliment Ohridski" specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	27	712
2	Applied Physics	16	26	698
3	Chemical Engineering	2	2	111
4	Natural Sciences	1	1	17
5	Biochemistry	1	1	12

E. Valcheva

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B. Arnaudov, T. Paskova, Björn Magnusson, Physical Review B	2004	182
Large-scale synthesis of free-standing N-doped graphene using microwave plasma N. Bundaleska, J. Henriques, M. V. Abrashev, Scientific Reports	2018	110
Towards large-scale in free-standing graphene and N-graphene sheets E. Tatarova, Ana Dias, J. Henriques, Scientific Reports Materials ScienceGraphene NanomeshesChemical EngineeringOther Graphene DerivativesEngineering	2017	100
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T. Paskova, Vanya Darakchieva, Jens Birch, Journal of Crystal Growth Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringSurface Science	2005	67
Deformation potentials of the E1(TO) and E2 modes of InN Vanya Darakchieva, E. Valcheva, Tania Paskova, Applied Physics Letters Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter Physics	2004	51
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films R. N. Kyutt, T. V. Shubina, T. Paskova, Journal of Applied Physics Materials ScienceEngineeringDislocation InteractionPhysicsCrystalline Defects	2000	45
Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity B. Arnaudov, T. Paskova, S. Evtimova, Physical review. B, Condensed matter Hall Effect DataEngineeringMultilayer ModelSemiconductor DeviceSemiconductors	2003	42
Lattice parameters of GaN layers grown on <i>a</i>-plane sapphire: Effect of in-plane strain anisotropy Vanya Darakchieva, T. Paskova, E. Valcheva, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEpitaxial GrowthEngineering	2003	39
Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions V. Dimitrova, D. Manova, E. Valcheva Materials Science and Engineering B Materials ScienceDielectric PropertiesAluminium NitrideOptical MaterialsEngineering	1999	37
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer E. Valcheva, T. Paskova, Sukkaneste Tungasmita, Applied Physics Letters Materials EngineeringMaterials ScienceAln BufferAluminium NitrideEngineering	2000	33

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