Microwave electronics device applications of AlGaN/GaN heterostructures

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

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High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 874 citations

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Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai et al. · Applied Physics Letters · 1993 · 359 citations

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Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

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Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

Yuan Wu, B.P. Keller, S. Keller et al. · Applied Physics Letters · 1996 · 350 citations

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