Japanese Journal of Applied Physics · 2010 · 13 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesAnnealing Temperature EffectsContact AnnealingContact ResistanceGallium Nitride (Gan) MaterialsHeterostructure Field-effect TransistorsHeterostructure TransistorsOhmic ContactsOptimum Temperature
We investigated the electrical characteristics of V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure field effect transistors (HFETs). A minimum ohmic contact resistivity of 1.6×10 -6 Ω cm 2 was achieved after annealing at 550 °C by optimizing V thickness to 15 nm. Cross-sectional transmission electron microscope (TEM) images exhibited a large difference in the extent of metal reaction between V/Al/Mo/Au and Ti/Al/Mo/Au. In addition to their lower contact resistivities, the low-temperature annealed V/Al/Mo/Au ohmic contacts exhibited better characteristics, such as enhanced breakdown voltages by about 100 V and smooth surface morphology, than the Ti/Al/Mo/Au ohmic contact annealed at the optimum annealing temperature.
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Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
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