Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

A single-frequency approximation for interface-state density determination

Winfield Hill, C. C. Coleman · Solid-State Electronics · 1980 · 735 citations

Natural Sciences, Chemistry, Materials Science +14

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

M.-H. Cho, Youngchae Roh, C. N. Whang et al. · Applied Physics Letters · 2002 · 338 citations

Engineering, Materials Engineering, Materials Science +17

Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

Hyoungsub Kim, Paul C. McIntyre, Krishna C. Saraswat · Applied Physics Letters · 2003 · 228 citations

Natural Sciences, Materials Engineering, Materials Science +17