Selective area chemical beam epitaxy for butt-coupling integration

Quantum well intermixing

J.H. Marsh · Semiconductor Science and Technology · 1993 · 319 citations

Engineering, Electrical Engineering, Materials Science +17

Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures

Tatsuya Sasaki, M. Kitamura, I. Mito · Journal of Crystal Growth · 1993 · 151 citations

Natural Sciences, Materials Science, Physics +12

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

Nobuhiko P. Kobayashi, J.L. Benchimol, Yang Gao · Applied Physics Letters · 1987 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +16

Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy

Jo Finders, J. Geurts, A. Köhl et al. · Journal of Crystal Growth · 1991 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +12

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

J.L. Benchimol, G. Le Roux, H. Thibierge et al. · Journal of Crystal Growth · 1991 · 50 citations

Engineering, Materials Engineering, Materials Science +16