10-nm silicon lines fabricated in (110) silicon

Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist

Wei Chen, H. Ahmed · Applied Physics Letters · 1993 · 265 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication of sub-10 nm structures by lift-off and by etching after electron-beam exposure of poly(methylmethacrylate) resist on solid substrates

Wei Chen, H. Ahmed · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 102 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication of high aspect ratio silicon pillars of <10 nm diameter

Wei Chen · Applied Physics Letters · 1993 · 90 citations

Engineering, Materials Engineering, Materials Science +17

Hydration Model for the Molarity Dependence of the Etch Rate of Si in Aqueous Alkali Hydroxides

O. J. Glembocki, E. D. Palik, Graciela R. Guel et al. · Journal of The Electrochemical Society · 1991 · 83 citations

Natural Sciences, Chemical Engineering, Chemistry +14

A latching accelerometer fabricated by the anisotropic etching of (110) oriented silicon wafers

D. Ciarlo · Journal of Micromechanics and Microengineering · 1992 · 63 citations

Engineering, Electrical Engineering, Mechatronics Engineering +14