K. Iwadate

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Yasuo Takahashi, H. Namatsu, K. Kurihara et al. · IEEE Transactions on Electron Devices · 1996 · 194 citations

Device Modeling, Electrical Engineering, Si Wire +12

Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water

Hideo Namatsu, Kenji Kurihara, Masao Nagase et al. · Applied Physics Letters · 1995 · 123 citations

Dimensional Limitations, Engineering, Mechanical Engineering +16

Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

Yasuyuki Nakajima, Yoshiro Takahashi, S. Horiguchi et al. · Applied Physics Letters · 1994 · 71 citations

Engineering, Silicon On Insulator, Interconnect (Integrated Circuits) +16

Fabrication of sub-10-nm silicon lines with minimum fluctuation

H. Namatsu, Masao Nagase, K. Kurihara et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 57 citations

Minimum Fluctuation, Engineering, High Resolution +20

An Electron Beam Nanolithography System and its Application to Si Nanofabrication

Kenji Kurihara, K. Iwadate, Hideo Namatsu et al. · Japanese Journal of Applied Physics · 1995 · 55 citations

Engineering, Electron-beam Lithography, Si Nanowires +17