IEEE Electron Device Letters · 1982 · 59 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice ModelingDevice SimulationHigh-frequency Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsBipolar Junction Transistor ModelingBipolar Junction Transistor SimulationCutoff FrequencyField-effect Transistor SimulationHeterojunction Bipolar TransistorsMicrowave Circuit ModelingNumerical Device SimulationNumerical Simulation
A numerical analysis program for the 1-dimensional simulation of GaAs/GaAlAs heterojunction bipolar transistors is described. Calculations for a representative transistor structure indicate that a cutoff frequency, f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> , of 100 GHz is obtainable. To attain such a high value, the transistor design incorporated a graded-bandgap base region and relatively high emitter doping (5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ), and the device was operated at high current density (5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ). Transient electron velocity overshoot effects were also included.
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